Dual-band doherty power amplifier with improved reactance compensation
نویسندگان
چکیده
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design developed for long-term evolution (LTE) frequency operation, particularly the application of two-way radio to improve efficiency at back-off point from saturation output selected dual frequencies in LTE bandwidth. Measurements show that prototype board has enhanced performance desired frequencies, namely 40.5 dBm, and 6 dB efficiencies 43% 47%, which exhibit gain approximately 10 0.8 GHz 2.1 GHz, respectively.
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ژورنال
عنوان ژورنال: Indonesian Journal of Electrical Engineering and Computer Science
سال: 2021
ISSN: ['2502-4752', '2502-4760']
DOI: https://doi.org/10.11591/ijeecs.v23.i3.pp1550-1556